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IRF510 - Futurlec
WebIRF510 www.vishay.com Vishay Siliconix S21-0819-Rev. D, 02-Aug-2024 3 Document Number: 91015 For technical questions, contact: [email protected] THIS DOCUMENT IS … WebMay 26, 2024 · IRF510 Key Features 5.6A, 100V RDS (ON) = 0.540Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Type Designator: IRF510 Type of Transistor: MOSFET Type of Control Channel: N-Channel IRF510 Specification IRF510 … css c if
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WebIRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, … WebThe IRF510 is a compromise regarding power dissipation and input capacitances, but, as long as you dont take it to its limits, it performs quite well for a switching FET: 3dB bandwidth is from ca. 700kHz to 33MHz, gain is ca. 7-10dB. Matching is always better than 12dB, and below 10MHz its even 17dB or better. The KT907A 1W Amp WebTechnical Information - Intersil IRF510 Datasheet. Note: The Copyright of this IRF510 Datasheet belongs to Intersil Corporation and is provided for information only. How To … css church